The Effect of Random Dopant Fluctuation on the Stability of 6t Sram Cell
نویسندگان
چکیده
In this work, we have used a statistical simulation based approach to predict variability in the noise margins of 6T SRAM cell caused by Random Dopant Fluctuation (RDF) for a well scaled 35 nm technology. Impact of RDF on Static Noise Margin (SNM) as well as Dynamic Noise Margin (DNM) has been investigated. Results show that RDF will result in up to 45% variability in SNM and DNM. This variability will require Data Retention Voltage (DRV) to be increased by 35% resulting in increase in standby leakage power.
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